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2N4856A - InterFET

Description: JFET N-Channel -40V Low Noise, TO-18

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2N4856A - InterFET - PCB symbol
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PCB Footprints
2N4856A - InterFET PCB footprint - Other - Other - TO-18
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2N4856A - InterFET - 3D model - Other - TO-18
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2N4856A Details

  • Manufacturer Part Number:

    2N4856A

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    InterFET Corporation

  • Case Connection:

    GATE

  • Configuration:

    SINGLE

  • Drain-source On Resistance-Max:

    25 Ω

  • FET Technology:

    JUNCTION

  • JEDEC-95 Code:

    TO-18

  • JESD-30 Code:

    O-MBCY-W3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    1.8 W

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N4856A Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2N4856A is -55°C to 150°C, although the device can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2N4856A requires a Vgs of 0V to -5V, and a Vds of 10V to 30V. Additionally, the device should be operated within the recommended current limits to prevent overheating and ensure reliability.
  • The maximum allowable power dissipation for the 2N4856A is 125W at a case temperature of 25°C. However, this value can be derated based on the operating temperature and other factors.
  • Yes, the 2N4856A can be used in high-frequency applications up to 1 GHz, although the device's performance may degrade at higher frequencies due to internal capacitances and inductances.
  • To protect the 2N4856A from ESD, it is recommended to handle the device with anti-static wrist straps, mats, and packaging. Additionally, the device should be stored in a conductive container or bag to prevent static buildup.

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2N4856A Overview

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2N4856A Alternates

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Image Part Number Model
Part Image 2N4856A Central Semiconductor Corp

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-18
Part Image 2N4856A Temic Semiconductors

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
Part Image 2N4856A Vishay Siliconix

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
Part Image 2N4856A Micro Electronics Corporation

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-18, TO-18, 3 PIN
Part Image 2N4856A Motorola Semiconductor Products

Small Signal Field-Effect Transistor, 40V, 1-Element, N-Channel, Silicon, Junction FET, TO-206AA
For a full list of alternate parts for 2N4856A, check out Findchips.com