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2N5551BU - onsemi

Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3

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PCB Footprints
2N5551BU - onsemi PCB footprint - Other - Other - TO−92 3 4.825x4.76 CASE 135AN ISSUE O_2026-1.1
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3D Models
2N5551BU - onsemi  - 3D model - Other - TO−92 3 4.825x4.76 CASE 135AN ISSUE O_2026-1.1
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2N5551BU Details

  • Manufacturer Part Number:

    2N5551BU

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3

  • Manufacturer Package Code:

    135AN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

2N5551BU Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N5551BU is -55°C to 150°C.
  • Yes, the 2N5551BU can be used as a switch, but it's not recommended due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). It's better suited for amplifier applications.
  • To ensure the 2N5551BU is properly biased for linear operation, you should provide a stable voltage supply, use a suitable biasing resistor network, and ensure the transistor is operated within its recommended operating conditions.
  • The maximum collector current rating for the 2N5551BU is 600 mA.
  • The 2N5551BU is not suitable for high-frequency applications due to its relatively low transition frequency (fT) of 100 MHz. It's better suited for low-to-medium frequency applications.

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2N5551BU Overview

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2N5551BU Alternates

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Image Part Number Model
Part Image 2N5551TA Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551ZL1G onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551RLRE onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551 International Devices Inc

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551 Texas Instruments

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

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