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2N5551G - onsemi

Description: Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)

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PCB Footprints
2N5551G - onsemi PCB footprint - Other - Other - TO−92 (TO−226) CASE 29−11 ISSUE AM_2025-5
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3D Models
2N5551G - onsemi  - 3D model - Other - TO−92 (TO−226) CASE 29−11 ISSUE AM_2025-5
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2N5551G Details

  • Manufacturer Part Number:

    2N5551G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92 (TO-226) 5.33mm Body Height

  • Package Description:

    LEAD FREE, CASE 29-11, TO-226AA, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Collector Current-Max (IC):

    0.6 A

  • Collector-Emitter Voltage-Max:

    160 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    30

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    1.5 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

2N5551G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N5551G is -55°C to 150°C.
  • Yes, the 2N5551G is suitable for switching applications due to its high switching speed and low saturation voltage.
  • To ensure reliability, follow proper PCB design guidelines, ensure adequate heat sinking, and operate the transistor within its recommended specifications.
  • The maximum current rating for the 2N5551G is 600mA for continuous operation.
  • Yes, the 2N5551G can be used in linear amplifier applications due to its high current gain and low noise figure.

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2N5551G Overview

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2N5551G Alternates

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Image Part Number Model
Part Image 2N5551RLRPG onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551D74Z Fairchild Semiconductor Corporation

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 933215530412 NXP Semiconductors

Small Signal Bipolar Transistor, 0.3A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551ZL1 onsemi

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Part Image 2N5551 Crimson Semiconductor Inc

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

For a full list of alternate parts for 2N5551G, check out Findchips.com