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2N6453 - InterFET

Description: JFET N-Channel -20V Low Noise

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PCB Footprints
2N6453 - InterFET PCB footprint - Other - Other - TO-72_2022-9
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2N6453 - InterFET  - 3D model - Other - TO-72_2022-9
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2N6453 Details

  • Manufacturer Part Number:

    2N6453

  • Part Life Cycle Code:

    Contact Manufacturer

  • ECCN Code:

    EAR99

  • Manufacturer:

    InterFET Corporation

  • Additional Feature:

    LOW NOISE

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-72

  • JESD-30 Code:

    O-MBCY-W4

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.36 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N6453 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N6453 is -55°C to 150°C, although it's recommended to operate within -40°C to 125°C for optimal performance.
  • To ensure proper biasing, make sure to provide a stable voltage supply, and set the gate-source voltage (Vgs) within the recommended range of -2V to 2V. Also, ensure the drain-source voltage (Vds) is within the recommended range of 0V to 30V.
  • The maximum continuous drain current (Id) rating for the 2N6453 is 2A, and the maximum pulsed drain current rating is 4A.
  • To protect the 2N6453 from ESD, handle the device with an anti-static wrist strap or mat, and ensure the device is stored in an anti-static package. Also, avoid touching the device's pins or leads during handling.
  • Yes, the 2N6453 can be used in switching applications due to its low gate charge and fast switching times. However, ensure the device is properly biased and the switching frequency is within the recommended range to avoid overheating and reduce electromagnetic interference (EMI).

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Part Image 2N6453 Texas Instruments

Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-72