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2N6667G - onsemi

Description: Obsolete - Power 8A 80V Darlington PNP

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PCB Footprints
2N6667G - onsemi PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK
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3D Models
2N6667G - onsemi  - 3D model - Transistor Outline, Vertical - TO−220 CASE 221A ISSUE AK
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2N6667G Details

  • Manufacturer Part Number:

    2N6667G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-220 3 LEAD STANDARD

  • Package Description:

    LEAD FREE, CASE 221A-09, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    221A

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    2 Days

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    10 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

  • DC Current Gain-Min (hFE):

    100

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2N6667G Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2N6667G is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to keep the device within the SOA to prevent thermal runaway and ensure reliable operation.
  • To ensure the 2N6667G is properly biased for linear operation, you should ensure that the base-emitter voltage (VBE) is within the recommended range (typically around 0.6-0.7V) and that the collector-emitter voltage (VCE) is sufficient to maintain a linear operating region. You can use a voltage divider or a current source to set the base voltage and ensure stable operation.
  • For optimal thermal performance, it's recommended to use a PCB layout that provides good thermal conduction and minimizes thermal resistance. This can be achieved by using a thermal pad or a heat sink, and ensuring good copper coverage around the device. Additionally, consider using thermal vias to dissipate heat more efficiently.
  • To handle ESD protection for the 2N6667G, it's recommended to use ESD protection devices such as TVS diodes or ESD protection arrays in conjunction with the transistor. You should also follow proper handling and storage procedures to prevent ESD damage during manufacturing and assembly.
  • For optimal assembly and soldering, follow the recommended soldering temperature and time profiles specified in the datasheet. Use a solder with a melting point below 260°C to prevent damage to the device. Additionally, ensure that the device is properly cleaned and dried before assembly to prevent contamination and moisture damage.

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2N6667G Overview

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Part Image 2N6667 Mospec Semiconductor Corp

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6667 Microsemi Corporation (now Microchip)

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin

Part Image 2N6667 Central Semiconductor Corp

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Part Image 2N6667 General Transistor Corp

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

Part Image 2N6667 Crimson Semiconductor Inc

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin

For a full list of alternate parts for 2N6667G, check out Findchips.com