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2N7000-D26Z - onsemi

Description: N-Channel Enhancement Mode Field Effect Transistor 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3

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PCB Footprints
2N7000-D26Z - onsemi PCB footprint - Other - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2025
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2N7000-D26Z - onsemi  - 3D model - Other - TO−92 3 4.83x4.76 LEADFORMED CASE 135AR ISSUE O_2025
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2N7000-D26Z Details

  • Manufacturer Part Number:

    2N7000-D26Z

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3 LF

  • Manufacturer Package Code:

    135AR

  • Reach Compliance Code:

    Compliant

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.05

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7000-D26Z Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7000-D26Z is -55°C to 150°C.
  • Yes, the 2N7000-D26Z is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The maximum gate-source voltage that can be applied to the 2N7000-D26Z is ±20V.
  • No, the 2N7000-D26Z is not suitable for linear amplifier applications due to its high drain-source resistance and low transconductance.
  • Yes, the 2N7000-D26Z is a logic-level MOSFET, meaning it can be driven directly from a logic gate output.

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2N7000-D26Z Overview

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Part Image 2N7000L34Z Fairchild Semiconductor Corporation

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For a full list of alternate parts for 2N7000-D26Z, check out Findchips.com