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2N7000 - Diotec

Description: N-Channel 60 V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3

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2N7000 Details

  • Manufacturer Part Number:

    2N7000

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Diotec Semiconductor AG

  • YTEOL:

    6.05

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-W3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    WIRE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Element Material:

    SILICON

2N7000 Frequently Asked Questions (FAQs)

  • The 2N7000 can operate safely between -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure the 2N7000 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage.
  • The maximum continuous drain current (Id) for the 2N7000 is 500mA, but it can handle up to 1A for short pulses.
  • To protect the 2N7000 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.
  • Yes, the 2N7000 can be used as a switch in high-frequency circuits, but be aware of the device's rise and fall times, which are around 10ns and 20ns, respectively.

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2N7000 Overview

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2N7000 Alternates

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Part Image 2N7000RLRM Rochester Electronics LLC

200mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, CASE 29-11, TO-226, 3 PIN

Part Image 2N7000 National Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image 2N7008-G Supertex Inc

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image 2N7000 TT Electronics Resistors

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image 2N7000 Supertex Inc

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

For a full list of alternate parts for 2N7000, check out Findchips.com