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2N7000 - onsemi

Description: High Density Cell Design for Low RDS(ON); Voltage Controlled Small Signal Switch; High Saturation Current Capability; Rugged and Reliable

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PCB Footprints
2N7000 - onsemi PCB footprint - Other - Other - TO−92 (TO−226)
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2N7000 - onsemi  - 3D model - Other - TO−92 (TO−226)
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2N7000 Details

  • Manufacturer Part Number:

    2N7000

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-92-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    135AN

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    6.05

  • Additional Feature:

    LOGIC LEVEL COMPATIBLE

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.4 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7000 Frequently Asked Questions (FAQs)

  • The 2N7000 can operate from -55°C to 150°C, but the recommended operating temperature range is -40°C to 125°C.
  • To ensure the 2N7000 is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage.
  • The maximum continuous drain current (Id) for the 2N7000 is 500mA, but it can handle up to 1A for short pulses.
  • To protect the 2N7000 from ESD, handle the device by the body, use an anti-static wrist strap, and store the device in an anti-static bag or container.
  • Yes, the 2N7000 can be used as a switch in high-frequency circuits up to 1 GHz, but the gate-source capacitance (Cgs) and gate-drain capacitance (Cgd) should be considered in the design.

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2N7000 Overview

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Part Image 2N7000D75Z onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image 2N7000_D74Z Fairchild Semiconductor Corporation

N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/AMMO

Part Image 2N7000BUJ18Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2N7000J14Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2N7000RLRPG onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

For a full list of alternate parts for 2N7000, check out Findchips.com