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2N7000RLRAG - onsemi

Description: Obsolete - N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω

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2N7000RLRAG Details

  • Manufacturer Part Number:

    2N7000RLRAG

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-92 (TO-226) 5.33mm Body Height

  • Package Description:

    LEAD FREE, CASE 29-11, TO-226, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    29-11

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-92

  • JESD-30 Code:

    O-PBCY-T3

  • JESD-609 Code:

    e1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    ROUND

  • Package Style:

    CYLINDRICAL

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.35 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Silver/Copper (Sn/Ag/Cu)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Transistor Element Material:

    SILICON

2N7000RLRAG Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7000RLRAG is -55°C to 150°C.
  • Yes, the 2N7000RLRAG is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The maximum drain-source voltage rating for the 2N7000RLRAG is 60V.
  • No, the 2N7000RLRAG is a low-power device with a maximum continuous drain current of 115mA, making it unsuitable for high-power applications.
  • The 2N7000RLRAG is a logic-level device, meaning it can be driven directly from a 3.3V or 5V logic output.

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2N7000RLRAG Overview

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2N7000RLRAG Alternates

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Image Part Number Model
Part Image 2N7000D75Z onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

Part Image 2N7000_D74Z Fairchild Semiconductor Corporation

N-Channel Enhancement Mode Field Effect Transistor, 3LD, TO-92, MOLDED, 0.200 IN LINE SPACING LD FORM (J61Z OPTION), 2000/AMMO

Part Image 2N7000BUJ18Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2N7000J14Z Fairchild Semiconductor Corporation

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2N7000RLRPG onsemi

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

For a full list of alternate parts for 2N7000RLRAG, check out Findchips.com