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2N7002KT1G - onsemi

Description: ESD Protected; Low RDS(on); Surface Mount Package; This is a Pb-Free Device; RoHS Compliant

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2N7002KT1G - onsemi PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - 2N7002KT1G
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2N7002KT1G - onsemi  - 3D model - SOT23 (3-Pin) - 2N7002KT1G
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2N7002KT1G Details

  • Manufacturer Part Number:

    2N7002KT1G

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    SOT-23 (TO-236) 3 LEAD

  • Package Description:

    SOT-23, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    318

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    6.5

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.32 A

  • Drain-source On Resistance-Max:

    1.6 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    5 pF

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.42 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002KT1G Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2N7002KT1G is -55°C to 150°C.
  • Yes, the 2N7002KT1G is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • The maximum gate-source voltage that can be applied to the 2N7002KT1G is ±20V.
  • No, the 2N7002KT1G is not suitable for linear amplifier applications due to its high drain-source resistance and low transconductance.
  • Yes, the 2N7002KT1G is a logic-level MOSFET, meaning it can be driven directly from a logic gate output.

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2N7002KT1G Overview

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