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2N7002V - onsemi

Description: Low Input/Output Leakage; Ultra-Small Surface Mount Package; Dual N-Channel MOSFET; Fast Switching Speed; Low Gate Threshold Voltage; Low Input Capacitance; RoHS Compliant; Low On-Resistance

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2N7002V - onsemi PCB footprint - SO Transistor Flat Lead - SO Transistor Flat Lead - 2N7002V
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2N7002V - onsemi  - 3D model - SO Transistor Flat Lead - 2N7002V
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2N7002V Details

  • Manufacturer Part Number:

    2N7002V

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOT-563

  • Package Description:

    ROHS COMPLIANT, ULTRA SMALL PACKAGE-6

  • Manufacturer Package Code:

    419BH

  • Country Of Origin:

    South Korea

  • ECCN Code:

    EAR99

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Configuration:

    SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.28 A

  • Drain-source On Resistance-Max:

    7.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    R-PDSO-F6

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    2

  • Number of Terminals:

    6

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2N7002V Frequently Asked Questions (FAQs)

  • The 2N7002V is a low-power, low-voltage MOSFET, and its operating frequency is limited by its internal capacitances and resistances. While there is no specific maximum operating frequency specified in the datasheet, it is generally suitable for low-frequency applications up to a few hundred kHz.
  • To ensure the 2N7002V is fully turned on, the gate-source voltage (Vgs) should be at least 4.5V, and the drain-source voltage (Vds) should be less than the gate-source voltage. Additionally, the gate drive circuit should be able to provide sufficient current to charge the gate capacitance quickly.
  • The thermal resistance of the 2N7002V is not explicitly specified in the datasheet. However, the thermal resistance of a similar device, the 2N7000, is around 200°C/W. As a rough estimate, the thermal resistance of the 2N7002V is likely to be in the same range.
  • While the 2N7002V can be used as a switch, it is not suitable for high-current applications due to its limited current rating (maximum continuous drain current is 115mA). For high-current applications, a more suitable device with a higher current rating should be chosen.
  • To protect the 2N7002V from ESD, it is recommended to handle the device with an anti-static wrist strap or mat, and to ensure that the device is stored in an anti-static package. Additionally, ESD protection devices such as TVS diodes can be used to protect the device from ESD events.

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