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2SA1162-GR,LF - Toshiba

Description: Bipolar Transistors - BJT PNP Transistor -50V S-Mini -0.15A -0.3V

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PCB Footprints
2SA1162-GR,LF - Toshiba PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - SC-59
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2SA1162-GR,LF Details

  • Manufacturer Part Number:

    2SA1162-GR,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Base Capacitance-Max:

    7 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.15 W

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

  • VCEsat-Max:

    0.3 V

2SA1162-GR,LF Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1162-GR,LF is a standard SOT-23 package with a 1.3mm x 1.3mm body size and a 0.5mm pitch.
  • To ensure reliable operation in high-temperature environments, ensure that the device is operated within its recommended operating temperature range (-40°C to 150°C), and consider using a heat sink or thermal management system to prevent overheating.
  • The maximum allowable power dissipation for the 2SA1162-GR,LF is 350mW, and it is recommended to derate the power dissipation by 2.5mW/°C above 25°C to ensure reliable operation.
  • Yes, the 2SA1162-GR,LF can be used as a switch in a high-frequency circuit, but it is recommended to consider the device's transition frequency (ft) of 100MHz and ensure that the circuit is designed to minimize ringing and oscillations.
  • To prevent electrostatic discharge (ESD) damage, handle the 2SA1162-GR,LF with an anti-static wrist strap or mat, and ensure that all equipment and tools are properly grounded.

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2SA1162-GR,LF Overview

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