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2SA1162-GR(F) - Toshiba

Description: Transistor Toshiba 2SA1162-GR(F) PNP Bipolar Transistor, 0.15 A, 50 V, 3-Pin SC-59

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2SA1162-GR(F) - Toshiba PCB footprint - Other - Other - SC-59
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2SA1162-GR(F) - Toshiba  - 3D model - Other - SC-59
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2SA1162-GR(F) Details

  • Manufacturer Part Number:

    2SA1162-GR(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-59, TO-236MOD, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Base Capacitance-Max:

    7 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

  • VCEsat-Max:

    0.3 V

2SA1162-GR(F) Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1162-GR(F) transistor is a standard SOT-23 package with a 1.3mm x 1.3mm body size and 0.5mm lead pitch. The recommended land pattern is available in the Toshiba datasheet or can be found in IPC-7351 standards.
  • To ensure reliable soldering, use a soldering iron with a temperature range of 250°C to 260°C, and a solder with a melting point of 217°C to 220°C. Apply a small amount of solder paste to the PCB pads, and use a reflow oven or a hot air gun to solder the component. Avoid overheating or applying excessive force to the component during soldering.
  • The maximum power dissipation of the 2SA1162-GR(F) transistor is 350mW at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and PCB design. Refer to the datasheet for more information on power dissipation and thermal resistance.
  • Yes, the 2SA1162-GR(F) transistor can be used in switching applications, but it is primarily designed for linear amplification and low-frequency switching. The transistor has a relatively slow switching time (tf = 10ns, tr = 20ns) and may not be suitable for high-frequency switching applications. Ensure that the operating frequency and switching times are within the recommended specifications.
  • To protect the 2SA1162-GR(F) transistor from ESD, handle the component with an anti-static wrist strap or mat, and ensure that the PCB and assembly process are ESD-compliant. Use ESD-sensitive devices and materials, and avoid touching the component pins or PCB pads during handling and assembly.

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2SA1162-GR(F) Overview

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