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2SA1162-O,LF - Toshiba

Description: Bipolar Transistors - BJT Bias Resistor Built-in transistor

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PCB Footprints
2SA1162-O,LF - Toshiba PCB footprint - SOT23 (3-Pin) - SOT23 (3-Pin) - TO-236MOD(H=1.4)
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2SA1162-O,LF Details

  • Manufacturer Part Number:

    2SA1162-O,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Base Capacitance-Max:

    7 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    70

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.15 W

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    80 MHz

  • VCEsat-Max:

    0.3 V

2SA1162-O,LF Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1162-O,LF is a standard SOT-23 package with a 1.3mm x 0.8mm body size and 0.5mm lead pitch. A recommended land pattern can be found in the Toshiba datasheet or in IPC-7351 standards.
  • While the 2SA1162-O,LF is a general-purpose PNP transistor, it is not optimized for high-frequency applications. Its transition frequency (fT) is around 100 MHz, which may not be sufficient for high-frequency circuits. For high-frequency applications, consider using a transistor specifically designed for high-frequency operation.
  • The 2SA1162-O,LF is not recommended for switching regulator designs due to its relatively low current gain (hFE) and high saturation voltage (VCE(sat)). It is better suited for linear amplifier or low-frequency switching applications. For switching regulators, consider using a transistor with higher current gain and lower saturation voltage.
  • To ensure proper biasing, follow the recommended operating conditions in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Also, consider the transistor's current gain (hFE) and saturation voltage (VCE(sat)) when designing the bias network. A stable voltage source and proper resistor values can help maintain the desired bias point.
  • The 2SA1162-O,LF is a general-purpose transistor and not specifically designed for automotive applications. It may not meet the required automotive standards for temperature range, vibration, or other environmental factors. For automotive applications, consider using a transistor that meets the relevant automotive standards, such as AEC-Q101.

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Part Image 2SA1162-O(TE85L,F) Toshiba America Electronic Components

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon