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2SA1163-BL,LF - Toshiba

Description: Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini

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PCB Footprints
2SA1163-BL,LF - Toshiba PCB footprint - Other - Other - 2-3F1A_2023
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2SA1163-BL,LF - Toshiba  - 3D model - Other - 2-3F1A_2023
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2SA1163-BL,LF Details

  • Manufacturer Part Number:

    2SA1163-BL,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-59, TO-236MOD, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    350

  • JEDEC-95 Code:

    TO-236

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.15 W

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.3 V

2SA1163-BL,LF Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1163-BL,LF is a standard SOT-23 package with a 1.3mm x 0.8mm pad size.
  • The 2SA1163-BL,LF is rated for operation up to 150°C, but it's recommended to derate the power dissipation at higher temperatures to ensure reliability.
  • To ensure optimal performance, the 2SA1163-BL,LF should be biased with a base-emitter voltage (VBE) of around 0.7V and a collector-emitter voltage (VCE) of at least 1V.
  • The 2SA1163-BL,LF has a transition frequency (fT) of 100MHz, making it suitable for high-frequency applications up to several tens of MHz.
  • Yes, the 2SA1163-BL,LF can be used in switching applications, but it's essential to ensure the transistor is properly biased and the switching frequency is within the device's capabilities.

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2SA1163-BL,LF Overview

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Part Image 2SA1163-BL(T5L,F,T) Toshiba America Electronic Components

Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-236