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2SA1587-GR,LF - Toshiba

Description: Bipolar Transistors - BJT Transistor for Low Freq. Amplification

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2SA1587-GR,LF - Toshiba PCB footprint - Other - Other - 2-2E1A
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2SA1587-GR,LF Details

  • Manufacturer Part Number:

    2SA1587-GR,LF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    SC-70, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.21.00.95

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Additional Feature:

    LOW NOISE

  • Collector Current-Max (IC):

    0.1 A

  • Collector-Emitter Voltage-Max:

    120 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-G3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    PNP

  • Power Dissipation Ambient-Max:

    0.1 W

  • Power Dissipation-Max (Abs):

    0.1 W

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    100 MHz

  • VCEsat-Max:

    0.3 V

2SA1587-GR,LF Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the 2SA1587-GR,LF is a standard SOT-23 package with a 1.3mm x 1.3mm body size and a 0.5mm pitch. The recommended land pattern is available in the Toshiba datasheet or can be found in the IPC-7351 standard.
  • To ensure reliability in high-temperature applications, ensure that the device is operated within its recommended operating temperature range (-40°C to 150°C). Also, follow proper PCB design and layout guidelines, and consider using thermal vias to dissipate heat. Additionally, consider using a heat sink or thermal interface material to reduce thermal resistance.
  • The maximum allowable power dissipation for the 2SA1587-GR,LF is 1.2W at an ambient temperature of 25°C. However, this value can be derated based on the operating temperature and other environmental factors. Refer to the datasheet for more information on power dissipation and thermal characteristics.
  • Yes, the 2SA1587-GR,LF can be used in switching applications. However, it's essential to ensure that the device is operated within its recommended switching frequency and voltage ratings. Also, consider the device's rise and fall times, and ensure that the switching frequency is within the device's capabilities.
  • To handle ESD protection for the 2SA1587-GR,LF, follow proper ESD handling procedures during manufacturing, storage, and assembly. Use ESD-protective packaging, wrist straps, and mats, and ensure that all equipment and tools are properly grounded. Additionally, consider adding ESD protection devices, such as TVS diodes, to the PCB design.

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2SA1587-GR,LF Overview

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Part Image 2SA1587-GR,LF(T Toshiba America Electronic Components

Small Signal Bipolar Transistor, 0.1A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon