Part Image

2SB1216S-E - onsemi

Description: Bipolar Transistor, -100V, -4A, Low VCE(sat), PNP Single

Download 2SB1216S-E Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
2SB1216S-E - onsemi  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

2SB1216S-E Details

  • Manufacturer Part Number:

    2SB1216S-E

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    IPAK / TP

  • Package Description:

    LEAD FREE, SC-64, TP, 3 PIN

  • Pin Count:

    3

  • Manufacturer Package Code:

    369AJ

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    0

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    4 A

  • Collector-Emitter Voltage-Max:

    100 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    140

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e6

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    PNP

  • Power Dissipation-Max (Abs):

    20 W

  • Surface Mount:

    NO

  • Terminal Finish:

    TIN BISMUTH

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    130 MHz

2SB1216S-E Frequently Asked Questions (FAQs)

  • The recommended PCB layout for optimal thermal performance involves placing a thermal pad on the bottom of the package, using a large copper area for heat dissipation, and keeping the thermal vias as close to the package as possible. A minimum of 2oz copper thickness is recommended.
  • To ensure reliable operation at high temperatures, it's essential to follow the recommended derating curves, ensure good thermal design, and avoid exceeding the maximum junction temperature (Tj) of 150°C. Additionally, consider using a heat sink or thermal interface material to improve heat dissipation.
  • The 2SB1216S-E has built-in ESD protection, but it's still recommended to follow standard ESD handling procedures during assembly and testing. A human body model (HBM) of 2kV and a machine model (MM) of 200V are recommended for ESD protection.
  • Yes, the 2SB1216S-E is suitable for high-reliability and automotive applications. It's AEC-Q101 qualified and meets the requirements for automotive-grade reliability. However, it's essential to follow the recommended operating conditions and design guidelines to ensure reliable operation.
  • The recommended storage and handling conditions for the 2SB1216S-E include storing the devices in their original packaging, avoiding exposure to moisture, and handling the devices by the body or leads to prevent damage. The storage temperature range is -40°C to 125°C.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

2SB1216S-E Overview

Use the download button to access the 2SB1216S-E 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SB12, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to 2SB1216S-E

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

2SB1216S-E Alternates

Showing results

Image Part Number Model
Part Image 2SB1216STP SANYO Semiconductor Co Ltd

Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon

Part Image 2SB1216S-H onsemi

Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-251

Part Image 2SB1216T-TL-E onsemi

Small Signal Bipolar Transistor, 4A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252