Part Image

2SC6026MFVGR,L3F - Toshiba

Description: Bipolar (BJT) Transistor NPN 50 V 150 mA 60MHz 150 mW Surface Mount VESM

Download 2SC6026MFVGR,L3F Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SC6026MFVGR,L3F - Toshiba PCB footprint - Other - Other - 2-1L1A-2025
click to zoom
3D Models
2SC6026MFVGR,L3F - Toshiba  - 3D model - Other - 2-1L1A-2025
click to zoom

2SC6026MFVGR,L3F Details

  • Manufacturer Part Number:

    2SC6026MFVGR,L3F

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    12 Weeks

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    7

  • Collector Current-Max (IC):

    0.15 A

  • Collector-Base Capacitance-Max:

    3 pF

  • Collector-Emitter Voltage-Max:

    50 V

  • Configuration:

    SINGLE

  • DC Current Gain-Min (hFE):

    200

  • JESD-30 Code:

    R-PDSO-F3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    NPN

  • Power Dissipation-Max (Abs):

    0.15 W

  • Surface Mount:

    YES

  • Terminal Form:

    FLAT

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    60 MHz

  • VCEsat-Max:

    0.25 V

2SC6026MFVGR,L3F Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SC6026MFVGR,L3F is -40°C to 150°C.
  • To ensure reliability, it is recommended to follow the derating guidelines provided in the datasheet, and to consider using a heat sink or thermal management system to keep the junction temperature within the recommended range.
  • The maximum allowable power dissipation for the 2SC6026MFVGR,L3F is 2.5W, but this can vary depending on the specific application and operating conditions.
  • To prevent ESD damage, it is recommended to follow proper handling and storage procedures, such as using anti-static bags or trays, and to implement ESD protection circuits in the design.
  • The recommended soldering conditions for the 2SC6026MFVGR,L3F are a peak temperature of 260°C, with a soldering time of 10 seconds or less.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SC6026MFVGR,L3F Overview

Use the download button to access the 2SC6026MFVGR,L3F schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SC60, or try a keyword search, such as Small Signal Bipolar Transistors

Parts related to 2SC6026MFVGR,L3F

Showing 0 results