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2SD1834T100 - ROHM Semiconductor

Description: NPN High gain amplifier Transistor (Darlington)

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PCB Footprints
2SD1834T100 - ROHM Semiconductor PCB footprint - Other - Other - MPT3
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2SD1834T100 - ROHM Semiconductor  - 3D model - Other - MPT3
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2SD1834T100 Details

  • Manufacturer Part Number:

    2SD1834T100

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Package Description:

    MPT3, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.75

  • Factory Lead Time:

    18 Weeks

  • Manufacturer:

    ROHM Semiconductor

  • YTEOL:

    3

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    1 A

  • Collector-Emitter Voltage-Max:

    60 V

  • Configuration:

    DARLINGTON

  • DC Current Gain-Min (hFE):

    2000

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e2

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    NPN

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Copper (Sn/Cu)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

  • Transition Frequency-Nom (fT):

    150 MHz

  • VCEsat-Max:

    1.5 V

2SD1834T100 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2SD1834T100 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general rule, it's recommended to operate the device within the specified voltage and current ratings to ensure reliable operation.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider the device's current gain (hFE) and saturation voltage (VCE(sat)) when designing the bias circuit.
  • For optimal thermal performance, ensure good heat dissipation by using a heat sink or thermal pad, and follow recommended PCB layout guidelines, such as keeping the device away from heat sources and using thermal vias to dissipate heat. Consult the datasheet and ROHM's application notes for specific guidance.
  • Yes, the 2SD1834T100 can be used in switching applications, but consider the device's switching characteristics, such as the transition frequency (ft) and storage time (ts). Ensure the device is properly biased and consider the impact of switching losses on the overall system efficiency.
  • Follow proper ESD handling procedures when working with the 2SD1834T100, such as using an ESD wrist strap or mat, and storing the device in an anti-static bag or container. Consult the datasheet and ROHM's application notes for specific ESD protection guidelines.

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