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2SJ325-AZ - Renesas Electronics

Description: The 2SJ325 is a Switching P-Channel Power MOSFET.

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2SJ325-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0004ZM‐A
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3D Models
2SJ325-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0004ZM‐A
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2SJ325-AZ Details

  • Manufacturer Part Number:

    2SJ325-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004ZM

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    4 A

  • Drain-source On Resistance-Max:

    0.11 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ325-AZ Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout for the 2SJ325-AZ in their application note AN1819. It suggests using a thermal pad on the bottom of the package, and connecting it to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure proper biasing during startup, it's recommended to use a soft-start circuit to slowly ramp up the voltage and current to the device. This can be achieved using an external voltage regulator or a dedicated soft-start IC.
  • The maximum allowed power dissipation for the 2SJ325-AZ is dependent on the ambient temperature and the thermal resistance of the PCB. According to the datasheet, the maximum power dissipation is 2.5W at an ambient temperature of 25°C. However, this value can be derated based on the actual operating conditions.
  • Yes, the 2SJ325-AZ is qualified for automotive and high-reliability applications. Renesas provides a separate datasheet for the automotive-grade version of the device, which includes additional information on its reliability and qualification.
  • To protect the 2SJ325-AZ from overvoltage and overcurrent conditions, it's recommended to use external protection circuits such as TVS diodes, zener diodes, or dedicated overvoltage protection ICs. Additionally, a fuse or a current limiter can be used to prevent overcurrent conditions.

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2SJ325-AZ Overview

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Part Image 2SJ325 Renesas Electronics Corporation

Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA