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2SJ330-AZ - Renesas Electronics

Description: The 2SJ330 is a Switching P-Channel Power MOSFET.

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2SJ330-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PRSS0003AK-A-1
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2SJ330-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - PRSS0003AK-A-1
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2SJ330-AZ Details

  • Manufacturer Part Number:

    2SJ330-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-45F

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0003AK

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.05 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    640 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    2 W

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    80 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ330-AZ Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SJ330-AZ is -40°C to 150°C, although it can withstand storage temperatures from -55°C to 175°C.
  • To ensure proper biasing, the 2SJ330-AZ requires a gate-source voltage (Vgs) between -2V and 2V, and a drain-source voltage (Vds) between 0V and 30V. Additionally, the gate current (Ig) should be limited to 10mA or less.
  • The maximum allowable power dissipation for the 2SJ330-AZ is 125W, although this can be increased to 250W with proper heat sinking and thermal management.
  • To protect the 2SJ330-AZ from ESD, handle the device with anti-static wrist straps, mats, or bags, and avoid touching the pins or leads. Additionally, ensure that the device is stored in a conductive container or bag when not in use.
  • The typical turn-on time for the 2SJ330-AZ is around 10ns, while the typical turn-off time is around 20ns. However, these times can vary depending on the specific application and operating conditions.

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2SJ330-AZ Overview

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Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Part Image 2SJ330 Renesas Electronics Corporation

Power Field-Effect Transistor, 20A I(D), 60V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET