Part Image

2SJ598-AZ - Renesas Electronics

Description: The 2SJ598 is a Pch Single Power Mosfet -60V -12A 130Mohm Mp-3/To-251.

Download 2SJ598-AZ Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SJ598-AZ - Renesas Electronics PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-251 (MP-3)
click to zoom
3D Models
2SJ598-AZ - Renesas Electronics  - 3D model - Transistor Outline, Vertical - TO-251 (MP-3)
click to zoom

2SJ598-AZ Details

  • Manufacturer Part Number:

    2SJ598-AZ

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    MP-3

  • Pin Count:

    3

  • Manufacturer Package Code:

    PRSS0004ZM-A3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    50 pF

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    P-CHANNEL

  • Power Dissipation Ambient-Max:

    1 W

  • Power Dissipation-Max (Abs):

    23 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SJ598-AZ Frequently Asked Questions (FAQs)

  • The recommended operating voltage range for the 2SJ598-AZ is 12V to 24V, with a maximum rating of 30V.
  • To ensure the stability of the output voltage, it is recommended to use a capacitor with a minimum capacitance of 10uF and an ESR of less than 1 ohm between the VCC and GND pins.
  • The maximum current rating for the 2SJ598-AZ is 2A, but it is recommended to operate at a maximum of 1.5A to ensure reliability and prevent overheating.
  • To protect the 2SJ598-AZ from overheating, it is recommended to provide adequate heat sinking, such as a heat sink with a thermal resistance of less than 10°C/W, and to operate the device within the recommended temperature range of -40°C to 125°C.
  • The recommended PCB layout for the 2SJ598-AZ includes using a solid ground plane, placing the input and output capacitors close to the device, and minimizing the length of the input and output traces to reduce noise and EMI.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SJ598-AZ Overview

Use the download button to access the 2SJ598-AZ schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SJ59, or try a keyword search, such as Small Signal Field-Effect Transistors

Parts related to 2SJ598-AZ

Showing 0 results

2SJ598-AZ Alternates

Showing results

Image Part Number Model
Part Image 2SJ598-AZ NEC Electronics Group

Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image 2SJ598 Renesas Electronics Corporation

Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251

Part Image 2SJ598 NEC Electronics Group

Small Signal Field-Effect Transistor, 12A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA