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2SK1062 - Toshiba

Description: N-ch MOSFET, 60 V, 0.2 A, 1 Ω@10V, SOT-346(S-Mini)

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PCB Footprints
2SK1062 - Toshiba PCB footprint - Other - Other - 2-3F1S
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2SK1062 - Toshiba  - 3D model - Other - 2-3F1S
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2SK1062 Details

  • Manufacturer Part Number:

    2SK1062

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-59

  • Package Description:

    2-3F1F, S-MINI, SC-59, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    0.2 A

  • Drain-source On Resistance-Max:

    1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    R-PDSO-G3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.2 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK1062 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK1062 is -40°C to 150°C, although the device can withstand storage temperatures from -55°C to 200°C.
  • To ensure proper biasing, the 2SK1062 requires a gate-source voltage (Vgs) between 2V and 4V, and a drain-source voltage (Vds) between 10V and 60V. Additionally, the device should be operated within the recommended current limits to prevent overheating.
  • The maximum allowable power dissipation for the 2SK1062 is 125W, although this value can be derated based on the operating temperature and other factors. It's essential to ensure the device is properly heat-sinked to prevent overheating.
  • Yes, the 2SK1062 can be used in switching applications due to its fast switching times (td(on) = 20ns, td(off) = 30ns) and low gate charge (Qg = 20nC). However, it's essential to ensure the device is properly driven and biased to prevent overheating and reduce electromagnetic interference (EMI).
  • The equivalent series resistance (ESR) of the 2SK1062's internal diode is approximately 10 ohms. This value can affect the device's performance in certain applications, such as high-frequency switching.

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Part Image 2SK1062(TE85L) Toshiba America Electronic Components

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,200MA I(D),SC-59

Part Image 2SK1062TE85R Toshiba America Electronic Components

Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236