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2SK118 - Toshiba

Description: FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE

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PCB Footprints
2SK118 - Toshiba PCB footprint - Other - Other - 2-4E1B
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2SK118 - Toshiba  - 3D model - Other - 2-4E1B
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2SK118 Details

  • Manufacturer Part Number:

    2SK118

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    2-4E1B, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Additional Feature:

    LOW NOISE

  • Configuration:

    SINGLE

  • FET Technology:

    JUNCTION

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    DEPLETION MODE

  • Operating Temperature-Max:

    125 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    0.1 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

2SK118 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2SK118 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage/current ratings. As a general guideline, the SOA is typically limited by the device's maximum junction temperature, voltage, and current ratings. It's recommended to consult with Toshiba's application notes or contact their technical support for more information.
  • To ensure the 2SK118 is properly biased, follow the recommended biasing conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider the device's current gain (hFE) and ensure the base current is sufficient to maintain the desired collector current. It's also important to consider the device's thermal characteristics and ensure proper heat sinking to prevent overheating.
  • The recommended PCB layout and thermal management for the 2SK118 involve using a thermally conductive PCB material, such as FR4 or IMS, and ensuring good thermal contact between the device and the PCB. A heat sink or thermal pad can be used to further improve heat dissipation. The device's thermal resistance (RthJA) should be considered when designing the PCB layout and thermal management. Consult Toshiba's application notes or PCB design guides for more information.
  • The 2SK118 is a general-purpose power transistor, and its high-frequency performance is limited. While it can be used in some high-frequency applications, its transition frequency (fT) is relatively low, and it may not be suitable for very high-frequency applications. If high-frequency performance is required, consider using a transistor specifically designed for high-frequency applications, such as a RF transistor.
  • To protect the 2SK118 from electrostatic discharge (ESD), follow proper handling and storage procedures, such as using anti-static bags or wrist straps. Ensure the device is properly grounded during assembly and testing, and consider using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design.

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