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2sk2013 - Toshiba

Description: Field effect transistor, silicon N channel, MOS type

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PCB Footprints
2sk2013 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10R1B_1
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3D Models
2sk2013 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10R1B_1
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2sk2013 Details

  • Manufacturer Part Number:

    2SK2013

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-67

  • Package Description:

    LEAD FREE, 2-10R1B, SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    180 V

  • Drain Current-Max (ID):

    1 A

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    17 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    25 W

  • Power Dissipation-Max (Abs):

    25 W

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    AMPLIFIER

  • Transistor Element Material:

    SILICON

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2sk2013 Overview

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