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2SK2231 - Toshiba

Description: N-channel MOSFET,2SK2231 5A 60V

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2SK2231 - Toshiba PCB footprint - Other - Other - TE16L1 (New PW-MOLD)
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2SK2231 Details

  • Manufacturer Part Number:

    2SK2231

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Date Of Intro:

    1994-01-01

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Avalanche Energy Rating (Eas):

    129 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    0.16 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    60 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    20 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2231 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the 2SK2231 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal resistance and maximum junction temperature. As a general guideline, the SOA is typically limited by the device's thermal capabilities, and it's recommended to keep the device within the specified thermal boundaries to ensure reliable operation.
  • To ensure proper biasing, follow the recommended operating conditions outlined in the datasheet, including the base-emitter voltage (VBE) and collector-emitter voltage (VCE). Additionally, consider the device's current gain (hFE) and ensure the base current is sufficient to maintain the desired collector current. It's also essential to consider the device's thermal characteristics and ensure adequate heat sinking to prevent overheating.
  • For optimal thermal performance, it's recommended to use a PCB layout that minimizes thermal resistance and ensures good heat dissipation. This can be achieved by using a thermal pad or heat sink, and ensuring good thermal conductivity between the device and the PCB. Additionally, consider using thermal vias and thermal layers in the PCB design to further improve heat dissipation.
  • To protect the 2SK2231 from ESD, follow proper handling and storage procedures, such as using anti-static bags or containers, and ensuring that all personnel handling the devices are properly grounded. Additionally, consider implementing ESD protection circuits or devices in the system design to prevent ESD events from damaging the 2SK2231.
  • The reliability and lifespan of the 2SK2231 depend on various factors, including operating conditions, environmental factors, and manufacturing quality. According to the datasheet, the 2SK2231 has a typical lifespan of 10 years at a junction temperature of 150°C. However, this can vary depending on the specific application and operating conditions. It's essential to follow proper design and manufacturing guidelines to ensure the device meets its expected lifespan.

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2SK2231 Overview

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Part Image 2SK2231TE16R Toshiba America Electronic Components

Power Field-Effect Transistor, 5A I(D), 60V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET