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2SK2313(F) - Toshiba

Description: Trans MOSFET N-CH Si 60V 60A 3-Pin(3+Tab) TO-3PN Sack

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PCB Footprints
2SK2313(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-16C1B_2024
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3D Models
2SK2313(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2-16C1B_2024
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2SK2313(F) Details

  • Manufacturer Part Number:

    2SK2313(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1054 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    60 A

  • Drain-source On Resistance-Max:

    0.015 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    920 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    240 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2313(F) Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SK2313(F) is -55°C to 150°C.
  • The 2SK2313(F) is a standard MOSFET, not a logic-level MOSFET.
  • The maximum drain-source voltage (Vds) rating for the 2SK2313(F) is 500V.
  • Yes, the 2SK2313(F) is suitable for high-frequency switching applications due to its low gate charge and fast switching times.
  • No, the 2SK2313(F) is not a radiation-hardened device.

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2SK2313(F) Overview

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