- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for 2SK2382(Q)
- Part Number 2SK2382(Q)
- Manufacturer Toshiba
- Pin Count 3
- Part Category Transistor
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - 2SK2382(Q)-1
- Released Date Dec 12, 2017
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
2SK2382(Q) Details
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Manufacturer Part Number:
2SK2382(Q)
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Part Life Cycle Code:
Obsolete
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Package Description:
SC-67, 3 PIN
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ECCN Code:
EAR99
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Manufacturer:
Toshiba America Electronic Components
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YTEOL:
0
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Avalanche Energy Rating (Eas):
166 mJ
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
200 V
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Drain Current-Max (ID):
15 A
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Drain-source On Resistance-Max:
0.18 Ω
2SK2382(Q) Frequently Asked Questions (FAQs)
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The recommended operating temperature range for the 2SK2382(Q) is -40°C to 150°C, but it can be extended to -55°C to 175°C for some applications with proper derating.
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To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V, and the drain-source voltage (Vds) should be within the recommended range of 10V to 30V, depending on the application.
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The maximum allowable power dissipation for the 2SK2382(Q) is 125W, but it can be derated based on the operating temperature and other factors.
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Yes, the 2SK2382(Q) is suitable for high-frequency switching applications up to 100kHz, but the user should ensure proper layout, decoupling, and thermal management to minimize losses and ensure reliability.
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To protect the 2SK2382(Q) from ESD, handle the device with proper ESD precautions, such as using an ESD wrist strap, mat, or workstation, and ensure that the device is stored in an ESD-safe environment.
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2SK2382(Q) Overview
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