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2SK2605 - Toshiba

Description: N-isolated MOSFET,2SK2605 5A 800V

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PCB Footprints
2SK2605 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - SC-67
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2SK2605 - Toshiba  - 3D model - Transistor Outline, Vertical - SC-67
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2SK2605 Details

  • Manufacturer Part Number:

    2SK2605

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SC-67

  • Package Description:

    SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    2.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    16 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    45 W

  • Power Dissipation-Max (Abs):

    45 W

  • Pulsed Drain Current-Max (IDM):

    15 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2605 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SK2605 is -55°C to 150°C.
  • Yes, the 2SK2605 is suitable for high-frequency switching applications due to its low gate charge and low output capacitance.
  • The recommended gate resistor value for the 2SK2605 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the 2SK2605 can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and that the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable power dissipation for the 2SK2605 is 125W, but this value can be increased by using a heat sink or other cooling methods.

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