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2SK2608 - Toshiba

Description: N-channel MOSFET,2SK2607 3A 900V

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PCB Footprints
2SK2608 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220
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2SK2608 - Toshiba  - 3D model - Transistor Outline, Vertical - TO-220
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2SK2608 Details

  • Manufacturer Part Number:

    2SK2608

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    TO-220AB

  • Package Description:

    LEAD FREE, 2-10P1B, SC-46, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Avalanche Energy Rating (Eas):

    295 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    3 A

  • Drain-source On Resistance-Max:

    4.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    10 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    100 W

  • Power Dissipation-Max (Abs):

    100 W

  • Pulsed Drain Current-Max (IDM):

    9 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK2608 Frequently Asked Questions (FAQs)

  • The recommended operating temperature range for the 2SK2608 is -55°C to 150°C, although it can withstand storage temperatures up to 200°C.
  • To ensure proper biasing, the 2SK2608 requires a Vgs threshold voltage of around 2-4V, and a Vds voltage of up to 600V. Additionally, a gate resistor (Rg) of around 1-10kΩ is recommended to prevent oscillations.
  • The maximum allowable power dissipation for the 2SK2608 is 150W, although this can be increased with proper heat sinking and thermal management.
  • Yes, the 2SK2608 is suitable for switching applications due to its fast switching times (tr, tf < 100ns) and low gate charge (Qg < 100nC). However, ensure proper gate drive and layout to minimize switching losses.
  • To protect the 2SK2608 from overvoltage and overcurrent, use a voltage clamp or transient voltage suppressor (TVS) to limit voltage spikes, and consider adding a current sense resistor and overcurrent protection circuitry.

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