Part Image

2SK3563 - Toshiba

Description: SILICON N CHANNEL MOS TYPE (PI-MOSVI) FIELD EFFECT TRANSISTOR Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Download 2SK3563 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
2SK3563 - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2-10U1B_
click to zoom
3D Models
2SK3563 - Toshiba  - 3D model - Transistor Outline, Vertical - 2-10U1B_
click to zoom

2SK3563 Details

  • Manufacturer Part Number:

    2SK3563

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Part Package Code:

    SC-67

  • Package Description:

    LEAD FREE, 2-10U1B, SC-67, 3 PIN

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0.4

  • Avalanche Energy Rating (Eas):

    180 mJ

  • Case Connection:

    ISOLATED

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    5 A

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    7 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    35 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3563 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SK3563 is -55°C to 150°C.
  • Yes, the 2SK3563 is suitable for high-frequency switching applications due to its low gate charge and high switching speed.
  • The recommended gate resistor value for the 2SK3563 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the 2SK3563 can be used in parallel to increase current handling capability, but it is essential to ensure that the devices are properly matched and the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable power dissipation for the 2SK3563 is 125W, but this value can be increased by using a heat sink or other cooling methods.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

2SK3563 Overview

Use the download button to access the 2SK3563 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like 2SK35, or try a keyword search, such as Power Field-Effect Transistors

Parts related to 2SK3563

Showing 0 results