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2SK3878(F) - Toshiba

Description: MOSFET N-Channel 900V 9A TO-3PN Toshiba 2SK3878(F) N-channel MOSFET Transistor, 9 A, 900 V, 3-Pin TO-3PN

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PCB Footprints
2SK3878(F) - Toshiba PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - 2SK3878(F)_1
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3D Models
2SK3878(F) - Toshiba  - 3D model - Transistor Outline, Vertical - 2SK3878(F)_1
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2SK3878(F) Details

  • Manufacturer Part Number:

    2SK3878(F)

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SC-65, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Toshiba America Electronic Components

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    778 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    9 A

  • Drain-source On Resistance-Max:

    1.3 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    45 pF

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    27 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

2SK3878(F) Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the 2SK3878(F) is -55°C to 150°C.
  • The recommended storage temperature range for the 2SK3878(F) is -55°C to 150°C.
  • The maximum power dissipation for the 2SK3878(F) is 125W.
  • The thermal resistance from junction to case for the 2SK3878(F) is 1.5°C/W.
  • The 2SK3878(F) is a fast-switching IGBT, designed for high-frequency switching applications.

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