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71256S45TDB - Renesas Electronics

Description: The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

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71256S45TDB - Renesas Electronics PCB footprint - Ceramic Dual-In-Line Packages - Ceramic Dual-In-Line Packages - SD28
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71256S45TDB Details

  • Manufacturer Part Number:

    71256S45TDB

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CDIP

  • Pin Count:

    28

  • Manufacturer Package Code:

    SD28

  • ECCN Code:

    3A001.A.2.C

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    45 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-CDIP-T28

  • JESD-609 Code:

    e0

  • Length:

    37.1475 mm

  • Memory Density:

    262144 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    8

  • Moisture Sensitivity Level:

    1

  • Number of Functions:

    1

  • Number of Terminals:

    28

  • Number of Words:

    32768 words

  • Number of Words Code:

    32000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    125 °C

  • Operating Temperature-Min:

    -55 °C

  • Organization:

    32KX8

  • Output Enable:

    YES

  • Package Body Material:

    CERAMIC, METAL-SEALED COFIRED

  • Package Code:

    DIP

  • Package Equivalence Code:

    DIP28,.3

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    240

  • Screening Level:

    MIL-STD-883 Class B

  • Seated Height-Max:

    5.08 mm

  • Standby Current-Max:

    0.02 A

  • Standby Voltage-Min:

    4.5 V

  • Supply Current-Max:

    0.135 mA

  • Supply Voltage-Max (Vsup):

    5.5 V

  • Supply Voltage-Min (Vsup):

    4.5 V

  • Supply Voltage-Nom (Vsup):

    5 V

  • Surface Mount:

    NO

  • Technology:

    CMOS

  • Temperature Grade:

    MILITARY

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Pitch:

    2.54 mm

  • Terminal Position:

    DUAL

  • Width:

    7.62 mm

71256S45TDB Frequently Asked Questions (FAQs)

  • Renesas provides a recommended PCB layout guide in their application note (APL-AN-1201) which includes thermal design considerations, such as using thermal vias, thermal pads, and heat sinks to ensure optimal heat dissipation.
  • Renesas recommends a specific power sequencing scheme to ensure proper device operation. This involves powering up the VCC and VCCIO pins simultaneously, followed by the VREF pin. A detailed power sequencing diagram is available in the datasheet.
  • Renesas recommends using high-frequency, low-ESR decoupling capacitors (e.g., 100nF, 1uF, and 10uF) placed close to the device's power pins to filter out noise and ensure stable operation.
  • Renesas provides guidelines for JTAG interface testing in their production testing application note (APL-AN-1203). This includes information on JTAG pin connections, signal levels, and testing procedures.
  • The thermal resistance values for the 71256S45TDB package are not explicitly stated in the datasheet. However, Renesas provides thermal resistance values for similar packages in their thermal design guide (APL-AN-1201). Engineers can use these values as a reference for thermal design calculations.

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71256S45TDB Overview

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