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71V416S10YG - Renesas Electronics

Description: The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL-compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

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71V416S10YG - Renesas Electronics PCB footprint - Other - Other - PBG44
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71V416S10YG - Renesas Electronics  - 3D model - Other - PBG44
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71V416S10YG Details

  • Manufacturer Part Number:

    71V416S10YG

  • Brand Name:

    Renesas

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    SOJ

  • Pin Count:

    44

  • Manufacturer Package Code:

    PBG44

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    10 ns

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PDSO-J44

  • JESD-609 Code:

    e3

  • Length:

    28.575 mm

  • Memory Density:

    4194304 bit

  • Memory IC Type:

    STANDARD SRAM

  • Memory Width:

    16

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    44

  • Number of Words:

    262144 words

  • Number of Words Code:

    256000

  • Operating Mode:

    ASYNCHRONOUS

  • Operating Temperature-Max:

    85 °C

  • Operating Temperature-Min:

    -40 °C

  • Organization:

    256KX16

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    SOJ

  • Package Equivalence Code:

    SOJ44,.44

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    260

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    3.683 mm

  • Standby Current-Max:

    0.02 A

  • Standby Voltage-Min:

    3 V

  • Supply Current-Max:

    0.2 mA

  • Supply Voltage-Max (Vsup):

    3.6 V

  • Supply Voltage-Min (Vsup):

    3 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    INDUSTRIAL

  • Terminal Finish:

    MATTE TIN

  • Terminal Form:

    J BEND

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    DUAL

  • Time@Peak Reflow Temperature-Max (s):

    40

  • Width:

    10.16 mm

71V416S10YG Frequently Asked Questions (FAQs)

  • A good PCB layout for the 71V416S10YG involves keeping the power and ground pins as close as possible to the device, using a solid ground plane, and minimizing the length of the signal traces. Additionally, it's recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane to reduce noise and improve signal integrity.
  • The 71V416S10YG has a thermal junction-to-ambient resistance (RθJA) of 30°C/W. To manage thermal performance, ensure good airflow around the device, use a heat sink if necessary, and avoid blocking the airflow around the device. It's also recommended to keep the device's operating temperature below 85°C to ensure reliable operation.
  • The 71V416S10YG can support clock frequencies up to 100 MHz. However, the actual clock frequency supported may vary depending on the specific application and system design. It's recommended to consult the datasheet and application notes for more information on clock frequency limitations.
  • A reliable POR circuit for the 71V416S10YG can be implemented using an external resistor and capacitor connected to the VCC pin. The recommended values are R = 1 kΩ and C = 10 μF. This circuit ensures that the device is properly reset during power-up and power-down cycles.
  • To minimize EMI and ensure EMC, it's recommended to use a shielded enclosure, keep the device's signal traces as short as possible, and use a common-mode choke or ferrite bead on the power supply lines. Additionally, ensure that the device is operated within its specified frequency range and that the system design meets the relevant EMI and EMC standards.

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71V416S10YG Overview

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Part Image 71V416S10YG Integrated Device Technology Inc

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

Part Image IDT71V416S10Y Integrated Device Technology Inc

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

Part Image IDT71V416S10Y8 Integrated Device Technology Inc

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

Part Image IDT71V416VS10YG Integrated Device Technology Inc

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

Part Image IDT71V416S10YG Renesas Electronics Corporation

Standard SRAM, 256KX16, 10ns, CMOS, PDSO44

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