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71V65703S80BQ - Renesas Electronics

Description: The 71V65703 3.3V CMOS SRAM is organized as 256K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V65703 contain address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM.

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71V65703S80BQ - Renesas Electronics PCB footprint - BGA - BGA - BQ165
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71V65703S80BQ Details

  • Manufacturer Part Number:

    71V65703S80BQ

  • Brand Name:

    Renesas

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    CABGA

  • Pin Count:

    165

  • Manufacturer Package Code:

    BQ165

  • ECCN Code:

    3A991.b.2.a

  • HTS Code:

    8542.32.00.41

  • Manufacturer:

    Renesas Electronics Corporation

  • YTEOL:

    0

  • Access Time-Max:

    8 ns

  • Additional Feature:

    FLOW-THROUGH ARCHITECTURE

  • Clock Frequency-Max (fCLK):

    95 MHz

  • I/O Type:

    COMMON

  • JESD-30 Code:

    R-PBGA-B165

  • JESD-609 Code:

    e0

  • Length:

    15 mm

  • Memory Density:

    9437184 bit

  • Memory IC Type:

    ZBT SRAM

  • Memory Width:

    36

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    1

  • Number of Terminals:

    165

  • Number of Words:

    262144 words

  • Number of Words Code:

    256000

  • Operating Mode:

    SYNCHRONOUS

  • Operating Temperature-Max:

    70 °C

  • Organization:

    256KX36

  • Output Characteristics:

    3-STATE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    TBGA

  • Package Equivalence Code:

    BGA165,11X15,40

  • Package Shape:

    RECTANGULAR

  • Package Style:

    GRID ARRAY, THIN PROFILE

  • Parallel/Serial:

    PARALLEL

  • Peak Reflow Temperature (Cel):

    225

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    1.2 mm

  • Standby Current-Max:

    0.04 A

  • Standby Voltage-Min:

    3.14 V

  • Supply Current-Max:

    0.25 mA

  • Supply Voltage-Max (Vsup):

    3.465 V

  • Supply Voltage-Min (Vsup):

    3.135 V

  • Supply Voltage-Nom (Vsup):

    3.3 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Temperature Grade:

    COMMERCIAL

  • Terminal Finish:

    TIN LEAD

  • Terminal Form:

    BALL

  • Terminal Pitch:

    1 mm

  • Terminal Position:

    BOTTOM

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Width:

    13 mm

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71V65703S80BQ Overview

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Part Image 71V65703S80BQG8 Integrated Device Technology Inc

ZBT SRAM, 256KX36, 8ns, CMOS, PBGA165

Part Image 71V65703S80BQ8 Integrated Device Technology Inc

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Part Image 71V65703S80BQ Integrated Device Technology Inc

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Part Image IDT71V65703S80BQ Renesas Electronics Corporation

ZBT SRAM, 256KX36, 8ns, CMOS, PBGA165

Part Image 71V65703S80BQG8 Renesas Electronics Corporation

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