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A1P50S65M2-F - STMicroelectronics

Description: ACEPACK 1 sixpack topology, 650 V, 50 A, trench gate field‑stop M series IGBT with soft diode and NTC

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A1P50S65M2-F - STMicroelectronics PCB footprint - Other - Other - A1P50S65M2-F-3
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A1P50S65M2-F Details

  • Manufacturer Part Number:

    A1P50S65M2-F

  • Brand Name:

    STMicroelectronics

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Country Of Origin:

    Philippines

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    53 Weeks, 1 Day

  • Manufacturer:

    STMicroelectronics

  • YTEOL:

    0

  • Case Connection:

    ISOLATED

  • Collector Current-Max (IC):

    50 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    COMPLEX

  • Gate-Emitter Thr Voltage-Max:

    7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JESD-30 Code:

    R-XUFM-X22

  • Number of Elements:

    6

  • Number of Terminals:

    22

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    UNSPECIFIED

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    208 W

  • Surface Mount:

    NO

  • Terminal Form:

    UNSPECIFIED

  • Terminal Position:

    UPPER

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    331 ns

  • Turn-on Time-Nom (ton):

    167.2 ns

  • VCEsat-Max:

    2.3 V

A1P50S65M2-F Frequently Asked Questions (FAQs)

  • STMicroelectronics provides a recommended PCB layout in their application note AN5046, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
  • The A1P50S65M2-F requires a gate driver that can provide a minimum of 4.5V gate-source voltage and 2A peak current. STMicroelectronics recommends their L638x series of gate drivers, which are specifically designed for their power MOSFETs.
  • Although the datasheet specifies a maximum drain-source voltage (Vds) of 650V, it's essential to consider the maximum voltage that can be applied during transient events, such as switching. STMicroelectronics recommends limiting the maximum voltage to 580V to ensure reliable operation.
  • The A1P50S65M2-F has a high di/dt rating of 100A/μs, which requires careful PCB design and layout to minimize parasitic inductance. Use a low-inductance PCB layout, and consider adding a snubber circuit to reduce voltage spikes and ringing.
  • Although the datasheet specifies an operating temperature range of -40°C to 150°C, STMicroelectronics recommends operating the A1P50S65M2-F within a range of -20°C to 125°C for optimal performance and reliability.

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About STMicroelectronics

STMicroelectronics (ST) is a global semiconductor company that designs, manufactures, and markets a broad range of integrated circuits (ICs), discrete devices, and other electronic components. STMicroelectronics offers a diverse portfolio of semiconductor products covering a wide range of applications and industries. Their product categories include microcontrollers, analog and mixed-signal ICs, MEMS (Micro-Electro-Mechanical Systems) sensors, power management ICs, RF (Radio Frequency) transceivers, aut

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