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AFGB30T65SQDN - onsemi

Description: AEC-Q101 Qualified; VCE(sat) = 1.6 V (typ.) @ IC = 30 A; Low VF soft recovery co-packaged diode

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AFGB30T65SQDN - onsemi - PCB symbol
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PCB Footprints
AFGB30T65SQDN - onsemi PCB footprint - Other - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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3D Models
AFGB30T65SQDN - onsemi - 3D model - Other - D2PAK−3 (TO−263, 3−LEAD) CASE 418AJ ISSUE C
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AFGB30T65SQDN Details

  • Manufacturer Part Number:

    AFGB30T65SQDN

  • Brand Name:

    onsemi

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    D2PAK-3 / TO-263-2

  • Manufacturer Package Code:

    418AJ

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    onsemi

  • YTEOL:

    5.82

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    6 V

  • Gate-Emitter Voltage-Max:

    30 V

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    220 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Matte Tin (Sn) - annealed

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    78.7 ns

  • Turn-on Time-Nom (ton):

    33.6 ns

  • VCEsat-Max:

    2.1 V

AFGB30T65SQDN Frequently Asked Questions (FAQs)

  • The maximum junction temperature for the AFGB30T65SQDN is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, and the TIM should have a thermal conductivity of at least 5 W/m-K.
  • The recommended gate drive voltage for the AFGB30T65SQDN is between 10 V and 15 V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. It's recommended to consult the datasheet and application notes for more information.
  • To protect the AFGB30T65SQDN from overvoltage and overcurrent, it's recommended to use a voltage regulator or a DC-DC converter to regulate the input voltage. Additionally, overcurrent protection can be achieved using a current sense resistor and a comparator or an overcurrent protection IC.
  • The recommended PCB layout and routing for the AFGB30T65SQDN involves keeping the power loops as small as possible, using a solid ground plane, and minimizing the length of the gate drive traces. It's also recommended to use a 4-layer PCB with a dedicated power plane and a dedicated ground plane.

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AFGB30T65SQDN Overview

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