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AIKQ100N60CTXKSA1 - Infineon

Description: IGBT Transistors DISCRETES

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AIKQ100N60CTXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - AIKQ100N60CTXKSA1
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AIKQ100N60CTXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - AIKQ100N60CTXKSA1
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AIKQ100N60CTXKSA1 Details

  • Manufacturer Part Number:

    AIKQ100N60CTXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    714 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    393 ns

  • Turn-on Time-Nom (ton):

    83 ns

  • VCEsat-Max:

    2 V

AIKQ100N60CTXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • Proper cooling is crucial for the device's reliability. Ensure good thermal contact between the device and the heat sink, and use a suitable thermal interface material. The heat sink should be designed to dissipate the maximum expected power loss.
  • The recommended gate resistor value depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 100 Ω is suitable for most applications. However, it's recommended to consult the application note or contact Infineon's support team for specific guidance.
  • Yes, the AIKQ100N60CTXKSA1 is suitable for high-reliability applications. It's manufactured using a robust process and has undergone rigorous testing to ensure its reliability. However, it's essential to follow proper design and assembly guidelines to ensure the device operates within its specified parameters.
  • Implementing overvoltage and overcurrent protection is crucial to prevent device damage. Use a suitable voltage regulator and overvoltage protection circuitry, such as a transient voltage suppressor (TVS) or a zener diode, to protect the device from voltage spikes. Additionally, incorporate overcurrent protection using a fuse or a current-sensing resistor.

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AIKQ100N60CTXKSA1 Overview

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