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AIKQ120N60CTXKSA1 - Infineon

Description: IGBT Transistors DISCRETES

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PCB Footprints
AIKQ120N60CTXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3-46
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3D Models
AIKQ120N60CTXKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3-46
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AIKQ120N60CTXKSA1 Details

  • Manufacturer Part Number:

    AIKQ120N60CTXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    160 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    833 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    398 ns

  • Turn-on Time-Nom (ton):

    84 ns

  • VCEsat-Max:

    2 V

AIKQ120N60CTXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature for AIKQ120N60CTXKSA1 is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.
  • Proper cooling is crucial for the IGBT's reliability. Ensure good thermal contact between the IGBT and the heat sink, and use a thermal interface material if necessary. Also, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for AIKQ120N60CTXKSA1 is between 10 ohms to 20 ohms. However, the optimal value may vary depending on the specific application and switching frequency.
  • Yes, AIKQ120N60CTXKSA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched in terms of their electrical characteristics and thermal performance. Also, a common gate drive and proper thermal management are crucial for reliable operation.
  • The maximum switching frequency for AIKQ120N60CTXKSA1 depends on the specific application and operating conditions. However, as a general guideline, it's recommended to keep the switching frequency below 20 kHz to minimize losses and ensure reliable operation.

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AIKQ120N60CTXKSA1 Overview

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Part Image AIKQ120N60CT Infineon Technologies AG

Insulated Gate Bipolar Transistor, 160A I(C), 600V V(BR)CES, N-Channel, TO-247