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AIKW20N60CTXKSA1 - Infineon

Description: IGBT Transistors DISCRETES

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AIKW20N60CTXKSA1 - Infineon - PCB symbol
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PCB Footprints
AIKW20N60CTXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3
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3D Models
AIKW20N60CTXKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO 247-3
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AIKW20N60CTXKSA1 Details

  • Manufacturer Part Number:

    AIKW20N60CTXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Collector Current-Max (IC):

    40 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    166 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    299 ns

  • Turn-on Time-Nom (ton):

    36 ns

  • VCEsat-Max:

    2.05 V

AIKW20N60CTXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AIKW20N60CTXKSA1 is -55°C to 175°C, as specified in the datasheet. However, it's essential to consider the derating curves for power dissipation and junction temperature to ensure reliable operation.
  • Proper cooling is crucial for the AIKW20N60CTXKSA1. Ensure good thermal contact between the MOSFET and the heat sink, and consider using thermal interface materials. Also, follow the recommended PCB layout and thermal design guidelines to minimize thermal resistance.
  • The recommended gate drive voltage for the AIKW20N60CTXKSA1 is typically between 10V to 15V, with a current capability of up to 2A. However, the specific requirements may vary depending on the application and switching frequency. Consult the datasheet and application notes for more information.
  • To protect the AIKW20N60CTXKSA1 from overvoltage and overcurrent, consider using voltage clamping devices, such as TVS diodes, and overcurrent protection circuits, like sense resistors and comparators. Also, ensure the MOSFET is operated within its safe operating area (SOA) and follow the recommended design guidelines.
  • The typical turn-on and turn-off times for the AIKW20N60CTXKSA1 are around 10-20 ns and 30-50 ns, respectively. However, these values can vary depending on the gate drive voltage, current, and PCB layout. Consult the datasheet and application notes for more information.

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AIKW20N60CTXKSA1 Overview

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