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AIKW30N60CTXKSA1 - Infineon

Description: IGBT Transistors DISCRETES

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AIKW30N60CTXKSA1 - Infineon - PCB symbol
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AIKW30N60CTXKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3_
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AIKW30N60CTXKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO247-3_
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AIKW30N60CTXKSA1 Details

  • Manufacturer Part Number:

    AIKW30N60CTXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    60 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    187 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    388 ns

  • Turn-on Time-Nom (ton):

    50 ns

  • VCEsat-Max:

    2.05 V

AIKW30N60CTXKSA1 Frequently Asked Questions (FAQs)

  • The maximum junction temperature that the AIKW30N60CTXKSA1 can withstand is 175°C, as specified in the datasheet. However, it's recommended to operate the device at a lower temperature to ensure reliability and longevity.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 280 W for the AIKW30N60CTXKSA1.
  • The recommended gate resistor value for the AIKW30N60CTXKSA1 is between 10 Ω to 20 Ω. However, the optimal value may vary depending on the specific application and switching frequency. It's recommended to consult the application note or contact Infineon's technical support for more information.
  • Yes, the AIKW30N60CTXKSA1 is suitable for high-reliability applications. It's manufactured using a robust and reliable process, and it's qualified according to the AEC-Q101 standard for automotive applications. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates within its specified parameters.
  • To protect the AIKW30N60CTXKSA1 from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuit. The voltage regulator should be designed to provide a stable output voltage within the device's specified range, and the overcurrent protection circuit should be designed to detect and respond to overcurrent conditions quickly enough to prevent damage to the device.

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AIKW30N60CTXKSA1 Overview

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