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AIKW40N65DF5XKSA1 - Infineon

Description: Highspeedswitchingseriesfifthgeneration

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AIKW40N65DF5XKSA1 Details

  • Manufacturer Part Number:

    AIKW40N65DF5XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    74 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    250 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    200 ns

  • Turn-on Time-Nom (ton):

    30 ns

  • VCEsat-Max:

    2.1 V

AIKW40N65DF5XKSA1 Frequently Asked Questions (FAQs)

  • The recommended PCB footprint for the AIKW40N65DF5XKSA1 is a TO-247-3L package with a minimum pad size of 10mm x 10mm and a thermal pad size of 5mm x 5mm.
  • To ensure optimal thermal performance, ensure good thermal coupling between the MOSFET and the heat sink, use a thermal interface material, and design the PCB to minimize thermal resistance.
  • The maximum allowed voltage for the gate-source voltage (Vgs) is ±20V, but it's recommended to keep it between -5V and +15V for optimal performance and reliability.
  • Handle the device by the body, use an anti-static wrist strap or mat, and store the device in an anti-static bag or container to prevent ESD damage.
  • A gate driver with a high current capability (e.g., 1A) and a low output impedance is recommended to ensure fast switching times and minimal power loss.

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AIKW40N65DF5XKSA1 Overview

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Part Image AIKW40N65DF5 Infineon Technologies AG

Insulated Gate Bipolar Transistor, 74A I(C), 650V V(BR)CES, N-Channel, TO-247