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AIKW50N65DH5XKSA1 - Infineon

Description: IGBTs DISCRETES

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Symbol
AIKW50N65DH5XKSA1 - Infineon - PCB symbol
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PCB Footprints
AIKW50N65DH5XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO-247-3
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3D Models
AIKW50N65DH5XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO-247-3
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AIKW50N65DH5XKSA1 Details

  • Manufacturer Part Number:

    AIKW50N65DH5XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    1

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    650 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    4.8 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    270 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    196 ns

  • Turn-on Time-Nom (ton):

    35 ns

  • VCEsat-Max:

    2.1 V

AIKW50N65DH5XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AIKW50N65DH5XKSA1 is -55°C to 175°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1 K/W, and ensuring good thermal contact between the MOSFET and heat sink.
  • The recommended gate resistor value is typically between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, the AIKW50N65DH5XKSA1 is suitable for high-frequency switching applications up to 100 kHz, but ensure proper gate drive and layout to minimize parasitic inductance.
  • Use a suitable overvoltage protection circuit, such as a TVS diode or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

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AIKW50N65DH5XKSA1 Overview

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