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AIKW75N60CTXKSA1 - Infineon

Description: IGBT Trench Field Stop 600 V 80 A 428 W Through Hole PG-TO247-3-41

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AIKW75N60CTXKSA1 - Infineon  - 3D model
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AIKW75N60CTXKSA1 Details

  • Manufacturer Part Number:

    AIKW75N60CTXKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    10 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Collector Current-Max (IC):

    80 A

  • Collector-Emitter Voltage-Max:

    600 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • Gate-Emitter Thr Voltage-Max:

    5.7 V

  • Gate-Emitter Voltage-Max:

    20 V

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-Channel

  • Power Dissipation-Max (Abs):

    428 W

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    365 ns

  • Turn-on Time-Nom (ton):

    69 ns

  • VCEsat-Max:

    2 V

AIKW75N60CTXKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the AIKW75N60CTXKSA1 is -40°C to 150°C.
  • Proper thermal management can be achieved by ensuring good heat sink contact, using thermal interface materials, and maintaining a clean and dust-free environment.
  • The recommended gate resistance value for the AIKW75N60CTXKSA1 is between 10 ohms and 20 ohms.
  • Yes, the AIKW75N60CTXKSA1 can be used in a parallel configuration, but it's essential to ensure that the modules are matched and the gate drive circuits are synchronized.
  • The maximum allowable voltage transient for the AIKW75N60CTXKSA1 is 1200 V.

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AIKW75N60CTXKSA1 Overview

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Part Image IKW75N60TA Infineon Technologies AG

Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247