Part Image

AIMBG120R160M1XTMA1 - Infineon

Description: MOSFETs Y

Download AIMBG120R160M1XTMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
AIMBG120R160M1XTMA1 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

AIMBG120R160M1XTMA1 Details

  • Manufacturer Part Number:

    AIMBG120R160M1XTMA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-263-7-HV-ND5.8, 7 PIN

  • Country Of Origin:

    Austria, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    65 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    17 A

  • Drain-source On Resistance-Max:

    0.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    1 pF

  • JEDEC-95 Code:

    TO-263

  • JESD-30 Code:

    R-PSSO-G7

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    7

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    106 W

  • Pulsed Drain Current-Max (IDM):

    43 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

AIMBG120R160M1XTMA1 Frequently Asked Questions (FAQs)

  • The thermal resistance (Rth) of the AIMBG120R160M1XTMA1 is typically around 0.35 K/W (junction-to-case) and 1.25 K/W (junction-to-ambient) at a maximum junction temperature of 175°C.
  • Yes, the AIMBG120R160M1XTMA1 is designed for high-reliability applications, such as automotive, industrial, and aerospace. It meets the requirements of AEC-Q101 and is qualified according to ISO/TS 16949.
  • To ensure reliability in humid environments, follow the recommended storage and handling procedures, and consider using moisture-sensitive device (MSD) precautions. Additionally, ensure proper PCB design, soldering, and encapsulation to prevent moisture ingress.
  • Infineon provides a recommended PCB layout and thermal design guide in the application note AN2019-07. It's essential to follow these guidelines to ensure optimal thermal performance and minimize thermal resistance.
  • The AIMBG120R160M1XTMA1 is rated for a maximum voltage of 1200 V. While it can be used in high-voltage applications, ensure that the device is properly designed and protected against overvoltage, overcurrent, and other potential faults.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

AIMBG120R160M1XTMA1 Overview

Use the download button to access the AIMBG120R160M1XTMA1 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like AIMBG, or try a keyword search, such as Power Field-Effect Transistors

Parts related to AIMBG120R160M1XTMA1

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview