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AIMW120R045M1XKSA1 - Infineon

Description: MOSFET DISCRETE SWITCHES

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AIMW120R045M1XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3(h=5.3)
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3D Models
AIMW120R045M1XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3(h=5.3)
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AIMW120R045M1XKSA1 Details

  • Manufacturer Part Number:

    AIMW120R045M1XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Austria, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    16 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    1200 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.059 Ω

  • FET Technology:

    TRENCH MOSFET

  • Feedback Cap-Max (Crss):

    11 pF

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    228 W

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON CARBIDE

AIMW120R045M1XKSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-01, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power handling capabilities according to the temperature derating curve provided in the datasheet.
  • Infineon recommends following the soldering conditions outlined in their application note AN2006-01, which includes guidelines for peak temperature, soldering time, and cooling rates to prevent damage to the device.
  • To protect the device from ESD, follow proper handling and storage procedures, use ESD-safe materials and equipment, and consider implementing ESD protection circuits in the system design.
  • Operating the device beyond the recommended operating conditions can lead to reduced reliability, decreased performance, and potentially even device failure. It's essential to ensure that the device operates within the specified ratings and conditions to guarantee reliable operation.

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AIMW120R045M1XKSA1 Overview

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