AIMW1 Model Download Search Results
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AIMW120R045M1XKSA1
Infineon
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1 | MOSFET DISCRETE SWITCHES | Transistor Outline, Vertical | AIMW120R045M1XKSA1 |
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AIMW120R080M1XKSA1
Infineon
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1 | MOSFET SIC_DISCRETE | Other | AIMW120R080M1XKSA1 |
3
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AIMW120R035M1HXKSA1
Infineon
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1 | MOSFET SIC_DISCRETE | Transistor Outline, Vertical | AIMW120R035M1HXKSA1 |
3
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AIMW120R045M1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 52A I(D), 1200V, 0.059ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | AIMW120R045M1 |
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AIMW120R035M1H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 52A I(D), 1200V, 0.046ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | AIMW120R035M1H |
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AIMW120R060M1H
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 36A I(D), 1200V, 0.078ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | AIMW120R060M1H |
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AIMW120R080M1
Infineon Technologies AG
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1 | Power Field-Effect Transistor, 33A I(D), 1200V, 0.104ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | AIMW120R080M1 |
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AIMW120R060M1HXKSA1
Infineon
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1 | Silicon Carbide MOSFET, Single, N Channel, 36 A, 1.2 kV, 0.06 ohm, TO-247 | AIMW120R060M1HXKSA1 |
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![Part Image](["https://componentsearchengine.com/Images/3/AIMW120R045M1XKSA1.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/1/AIMW120R080M1XKSA1.jpg",null,null])
![Part Image](["https://componentsearchengine.com/Images/3/AIMW120R035M1HXKSA1.jpg",null,null])
![Part Image](["https://www.mouser.com/images/infineon/images/TO-247-3_SPL.jpg",null,null])
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