AIMZH120R020M1T - Infineon

AIMZH120R020M1T Details

• Manufacturer Part Number:

  AIMZH120R020M1T

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Active

• Country Of Origin:

  Austria, Mainland China

• ECCN Code:

  EAR99

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  8

• Avalanche Energy Rating (Eas):

  340 mJ

• Configuration:

  SINGLE WITH BUILT-IN DIODE AND KELVIN SENSOR

• DS Breakdown Voltage-Min:

  1200 V

• Drain Current-Max (ID):

  100 A

• Drain-source On Resistance-Max:

  0.025 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• Feedback Cap-Max (Crss):

  7 pF

• JEDEC-95 Code:

  TO-247

• JESD-30 Code:

  R-PSFM-T4

• Number of Elements:

  1

• Number of Terminals:

  4

• Operating Mode:

  ENHANCEMENT MODE

• Operating Temperature-Max:

  175 °C

• Operating Temperature-Min:

  -55 °C

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Polarity/Channel Type:

  N-CHANNEL

• Power Dissipation-Max (Abs):

  429 W

• Pulsed Drain Current-Max (IDM):

  256 A

• Reference Standard:

  AEC-Q101

• Surface Mount:

  NO

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON CARBIDE