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Part Number	D.S	Description	Package Category	Prices / Stock	Model	Action
AIMZH120R020M1TXKSA1 Infineon	1	N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole PG-TO247-4-11	Other	AIMZH120R020M1TXKSA1	3D model available Symbol and footprint available 3	1 Download Model
AIMZH120R020M1T Infineon	1	N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole PG-TO247-4-11	Other	AIMZH120R020M1T	3D model available Symbol and footprint available 3	1 Download Model
AIMZHN120R010M1TXKSA1 Infineon	1	N-Channel 1200 V 202A (Tc) 750W (Tc) Through Hole PG-TO247-4-14 , 1200 V , 5.1V @ 30mA , 5703 pF , -55°C ~ 175°C	Other	AIMZHN120R010M1TXKSA1	3D model available Symbol and footprint available 3	1 Download Model
AIMZH120R060M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 38A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET		AIMZH120R060M1T	3D model not available Symbol and footprint not available 0	0 Build or Request

AIMZH120R010M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZH120R010M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZH120R160M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 17A I(D), 1200V, 0.2ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZH120R160M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R120M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 1200V, 0.15ohm, 4-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-243AB		AIMZHN120R120M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R030M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 69A I(D), 1200V, 0.038ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R030M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R030M1TXKSA1 Infineon	1	N-Channel 1200 V 69A (Tc) 326W (Tc) Through Hole PG-TO247-4-14		AIMZHN120R030M1TXKSA1	3D model available Symbol and footprint not available 1	1 Download Model
AIMZH120R120M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 1200V, 0.15ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZH120R120M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZH120R030M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 69A I(D), 1200V, 0.038ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZH120R030M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R020M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 100A I(D), 1200V, 0.025ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R020M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R160M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 17A I(D), 1200V, 0.2ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R160M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZH120R040M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZH120R040M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R080M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 22A I(D), 1200V, 86ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R080M1T	3D model not available Symbol and footprint not available 0	0 Build or Request

AIMZHN120R010M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R010M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R060M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 38A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R060M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZHN120R040M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 55A I(D), 1200V, 0.05ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZHN120R040M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZH120R080M1T Infineon Technologies AG	1	Power Field-Effect Transistor, 31A I(D), 1200V, 0.1ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247		AIMZH120R080M1T	3D model not available Symbol and footprint not available 0	0 Build or Request
AIMZH120R010M1TXKSA1 Infineon	1	1200 V SiC Trench MOSFET TO247-4		AIMZH120R010M1TXKSA1	3D model available Symbol and footprint not available 1	1 Download Model
AIMZH120R120M1TXKSA1 Infineon	0	Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.15 ohm, TO-247		AIMZH120R120M1TXKSA1	3D model available Symbol and footprint not available 1	1 Download Model

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