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APT45GP120B2DQ2 - Advanced Power Technology

Description: POWER MOS 7® IGBT PT 1200 V 113 A 625 W Through Hole -55 to 150°C

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PCB Footprints
APT45GP120B2DQ2 - Advanced Power Technology PCB footprint - Other - Other - T-MAX™ (B2) P
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3D Models
APT45GP120B2DQ2 - Advanced Power Technology  - 3D model - Other - T-MAX™ (B2) P
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APT45GP120B2DQ2 Details

  • Manufacturer Part Number:

    APT45GP120B2DQ2

  • Part Life Cycle Code:

    Transferred

  • Package Description:

    T-MAX, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Advanced Power Technology

  • Case Connection:

    COLLECTOR

  • Collector Current-Max (IC):

    113 A

  • Collector-Emitter Voltage-Max:

    1200 V

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    POWER CONTROL

  • Transistor Element Material:

    SILICON

  • Turn-off Time-Nom (toff):

    230 ns

  • Turn-on Time-Nom (ton):

    47 ns

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APT45GP120B2DQ2 Overview

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